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IRG4BC30U - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified.

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Full PDF Text Transcription for IRG4BC30U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRG4BC30U. For precise diagrams, and layout, please refer to the original PDF.

PD - 91452E IRG4BC30U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mo...

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rating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

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