IRG4BC30U Overview
PD - 91452E IRG4BC30U INSULATED GATE BIPOLAR TRANSISTOR.
IRG4BC30U Key Features
- UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-220AB package
- Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs