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IRG4BC40F - HEXFET Power MOSFET

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International Rectifier

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IRG4BC40F HEXFET Power MOSFET by International Rectifier - Datasheet Preview — Datasheet preview – IRG4BC40F

Datasheet Details

Part number	IRG4BC40F
Manufacturer	International Rectifier
File Size	171.72 KB
Description	HEXFET Power MOSFET
Datasheet	IRG4BC40F Datasheet
Additional preview pages of the IRG4BC40F datasheet.

Product details

Features

Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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Published: May 30, 2007 |