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IRG4BC40F Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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IRG4BC40F hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4BC40F
Manufacturer	International Rectifier (now Infineon)
File Size	171.72 KB
Description	HEXFET Power MOSFET
Download	IRG4BC40F Download (PDF)

Overview

PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

More Datasheets from International Rectifier (now Infineon)

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IRG4BC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR
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