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International Rectifier Electronic Components Datasheet

IRG4CC71KB Datasheet

IGBT Die

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IRG4CC71KB IGBT Die in Wafer Form
PD- 91834A
IRG4CC71KB
C
G
E
600 V
Size 7.1
Ultra-Fast Speed
Circuit Rated Rated
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
VCE (on)
V(BR)CES
VGE(th)
ICES
IGES
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
1.7V Max.
600V Min.
3.0V Min., 6.5V Max.
300 µA Max.
± 1.1 µA Max.
IC = 10A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 250µA, VGE = 0V
VGE = VCE , TJ =25°C, IC =250µA
TJ = 25°C, VCE = 600V
TJ = 25°C, VGE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Cr-NiV-Ag ( 1kA-2kA-.2.5kA )
Nominal Front Metal Composition, Thickness:
99% Al, 1% Si (4 microns)
Dimensions:
0.305" x 0.390"
Wafer Diameter:
150mm, with std. < 100 > flat
Wafer thickness:
.015" + / -.003"
Relevant Die Mechanical Dwg. Number01-5271
Minimum Street Width
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
Ink Dot Location
Consistent throughout same wafer lot
Recommended Storage Environment:
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300C
Reference Standard IR packaged part ( for design ) : IRG4PSC71K
Die Outline
www.irf.com
11/28/05


International Rectifier Electronic Components Datasheet

IRG4CC71KB Datasheet

IGBT Die

No Preview Available !

IRG4CC71KB
Additional Testing and Screening
For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level
testing, please contact your local IR Sales.
Shipping
Three shipping options are offered as standard.
Un-sawn wafer
Die in waffle pack
Die on film
Tape and Reel is also available for some products. Please consult your local IR sales office or email http:/
/die.irf.com for additional information.
Please specify your required shipping option when requesting prices and ordering Die product. If not
specified, Un-sawn wafer will be assumed.
Handling
Product must be handled only at ESD safe workstations. Standard ESD precautions and safe
work environments are as defined in MIL-HDBK-263.
Product must be handled only in a class 10,000 or better-designated clean room environment.
Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD
protected tip should be used.
Wafer/Die Storage
Proper storage conditions are necessary to prevent product contamination and/or degradation
after shipment.
Un-sawn wafers and singulated die can be stored for up to 12 months when in the original
sealed packaging at room temperature (45% +/- 15% RH controlled environment).
Un-sawn wafers and singulated die that have been opened can be stored when returned to their
containers and placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15% RH
controlled environment).
Note: To reduce the risk of contamination or degradation, it is recommended that product not
being used in the assembly process be returned to their original containers and resealed with a
vacuum seal process.
Sawn wafers on a film frame are intended for immediate use and have a limited shelf life.
Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf life.
This is primarily due to the nature of the adhesive tape used to hold the product in the carrier
tape cavity. This product can be stored for up to 30 days. This applies whether or not the
material has remained in its original sealed container.
Further Information
For further information please contact your local IR Sales office or email your enquiry to
http://die.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/05


Part Number IRG4CC71KB
Description IGBT Die
Maker International Rectifier
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