IRG4CC50WB Datasheet | International Rectifier

Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 2.3V Max. 600V Min. 3.0V Min., 6.0V Max. 250 µA Max. ± 1.1 µA Max. Test Conditions IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, V GE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Nominal Backmetal position, Thickness: Nominal Front Metal position, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Remended Storage Environment: Remended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4PC50W Cr-Ni V-Ag ( 1k A-2k A-.2.5k A ) 99% Al, 1% Si (4 microns) 0.257" x 0.260" 150mm, with std. < 100 > flat .015" + / -.003" 01-5226 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline .irf. 01/19/01...