Datasheet Details
| Part number | IRG4CC50WB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 29.73 KB |
| Description | IGBT Die |
| Datasheet | IRG4CC50WB_InternationalRectifier.pdf |
|
|
|
Overview: PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G E 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES.
| Part number | IRG4CC50WB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 29.73 KB |
| Description | IGBT Die |
| Datasheet | IRG4CC50WB_InternationalRectifier.pdf |
|
|
|
Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 2.3V Max.
600V Min.
3.0V Min., 6.0V Max.
| Part Number | Description |
|---|---|
| IRG4CC50UB | IGBT Die |
| IRG4CC20FB | IGBT Die |
| IRG4CC71KB | IGBT Die |
| IRG4CH40SB | IGBT Die |
| IRG41BC10UDPBF | Insulated Gate Bipolar Transistor |
| IRG41BC30UD | Ultra Fast CoPack IGBT |
| IRG4BC10K | Short Circuit Rated UltraFast IGBT |
| IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10KDPBF | HEXFET Power MOSFET |
| IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR |