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IRG4CH40SB - IGBT Die

General Description

Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.5V Max.

IC = 10A, TJ = 25°C, VGE = 15V 1200V Min.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C G E 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.5V Max. IC = 10A, TJ = 25°C, VGE = 15V 1200V Min. TJ = 25°C, ICES = 250µA, VGE = 0V 3.0V Min., 6.0V Max. VGE = VCE , TJ =25°C, IC =250µA 300 µA Max. TJ = 25°C, VCE = 1200V ± 11 µA Max. TJ = 25°C, VGE = +/- 20V Cr-NiV-Ag ( 1kA-2kA-2.5kA ) 99% Al, 1% Si (4 microns) 0.170" x 0.243" 150mm, with std. < 100 > flat .015" + / -.003" 01-5242 100 Microns 0.