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IRG4CH40SB - IGBT Die

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Description

Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.5V Max.

IC = 10A, TJ = 25°C, VGE = 15V 1200V Min.

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