Datasheet Details
| Part number | IRG4CC50UB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 60.10 KB |
| Description | IGBT Die |
| Datasheet | IRG4CC50UB-InternationalRectifier.pdf |
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Overview: IRG4CC50UB IGBT Die in Wafer Form PD- 91764A IRG4CC50UB C G E 600 V Size 5 Ultra-Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ).
| Part number | IRG4CC50UB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 60.10 KB |
| Description | IGBT Die |
| Datasheet | IRG4CC50UB-InternationalRectifier.pdf |
|
|
|
Guaranteed (Min/Max) Test Conditions VCE (on) V(BR)CES VGE(th) ICES IGES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current 2.0V Max.
600V Min.
3.0V Min., 6.0V Max.
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|---|---|
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| IRG4CH40SB | IGBT Die |
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| IRG4BC10K | Short Circuit Rated UltraFast IGBT |
| IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10KDPBF | HEXFET Power MOSFET |
| IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR |