IRG4CC50UB Datasheet | International Rectifier

Description Guaranteed (Min/Max) Test Conditions VCE (on) V(BR)CES VGE(th) ICES IGES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current 2.0V Max. 600V Min. 3.0V Min., 6.0V Max. 250µA Max. ± 1.1µA Max. IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal position, Thickness: Cr-Ni / V-Ag ( 1k A-2k A-.2.5k A ) Norminal Front Metal position, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5226 Minimum Street Width 100 Microns Reject Ink Dot Size 0.25mm Diameter Minimum Ink Dot Location Consistent throughout same wafer lot Remended Storage Environment: Store in original container, in dessicated nitrogen, with no contamination Remended Die Attach Conditions For optimum electrical results, die attach temperature should not exceed 300C Reference Standard IR packaged part ( for design ) : IRG4PC50U Die Outline .irf. 09/27/07...