IRG4IBC30UD diode equivalent, insulated gate bipolar transistor with ultrafast soft recovery diode.
* 2.5kV, 60s insulation voltage U
* 4.8 mm creapage distance to heatsink
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >20.
rr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E.
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