IRG4IBC30UDPBF transistor equivalent, insulated gate bipolar transistor.
* 2.5kV, 60s insulation voltage
* 4.8 mm creapage distance to heatsink
* UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >20.
id dt tx
10% Irr
Vcc
DIODE RECOVERY WAVEFORMS
DIODE REVERSE RECOVERY ENERGY
t3
∫ t4
Erec = Vd id dt t3
t4
Fig. 18.
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