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IRG4IBC30FD Datasheet INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Manufacturer: International Rectifier (now Infineon)

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IRG4IBC30FD insulated gate bipolar transistor with ultrafast soft recovery diode by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4IBC30FD
Manufacturer	International Rectifier (now Infineon)
File Size	223.94 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet	IRG4IBC30FD Datasheet

Overview

PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Very Low 1.59V votage drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
IGBT co-packaged with.

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