IRG4IBC30FD Description
PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG4IBC30FD Key Features
- Very Low 1.59V votage drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink Fast: Optimized for medi
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
- Tighter parameter distribution
- Industry standard Isolated TO-220 FullpakTM outline
- Simplified assembly
- Highest efficiency and power density
- HEXFREDTM antiparallel Diode minimizes switching losses and EMI