Download IRG4IBC30SPBF Datasheet PDF
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IRG4IBC30SPBF Description

PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR.

IRG4IBC30SPBF Key Features

  • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz)
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
  • Industry standard TO-220 Full-Pak
  • Lead-Free
  • Generation 4 IGBTs offer highest efficiencies available
  • IGBTs optimized for specific application conditions
  • Designed to be a "drop-in" replacement for equivalent