IRG4IBC30S Description
PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR.
IRG4IBC30S Key Features
- Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz)
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
- Industry standard TO-220 Full-Pak
- Generation 4 IGBTs offer highest efficiencies available
- IGBTs optimized for specific application conditions
- Designed to be a "drop-in" replacement for equivalent industry -standard Generation 3 IR IGBTs