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IRG4IBC30KD Datasheet INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Manufacturer: International Rectifier (now Infineon)

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IRG4IBC30KD insulated gate bipolar transistor with ultrafast soft recovery diode by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4IBC30KD
Manufacturer	International Rectifier (now Infineon)
File Size	195.55 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet	IRG4IBC30KD Datasheet

Overview

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

High switching speed optimized for up to 25kHz with low VCE(on).
Short Circuit Rating 10µs @ 125°C, VGE = 15V.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
IGBT co-packaged with.

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