Datasheet4U.com

IRG4MC50U Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

📥 Download Datasheet

IRG4MC50U insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4MC50U
Manufacturer	International Rectifier (now Infineon)
File Size	287.99 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4MC50U Datasheet

Overview

www.DataSheet4U.com PD -94273A IRG4MC50U INSULATED GATE BIPOLAR.

Key Features

Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C UltraFast Speed IGBT VCES = 600V G E VCE(on) max = 2.25V @VGE = 15V, IC = 27A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4MC50F	INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC30F	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC40U	INSULATED GATE BIPOLAR TRANSISTOR
IRG41BC10UDPBF	Insulated Gate Bipolar Transistor
IRG41BC30UD	Ultra Fast CoPack IGBT
IRG4BC10K	Short Circuit Rated UltraFast IGBT
IRG4BC10KD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10KDPBF	HEXFET Power MOSFET
IRG4BC10S	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-L	(IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR