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IRG4PC30F - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRG4PC30F insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PC30F
Manufacturer	International Rectifier (now Infineon)
File Size	149.82 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30F Datasheet

Overview

PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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