IRG4PC30FD transistor equivalent, insulated gate bipolar transistor.
* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
* Generation 4 IGBT design provides tighter parameter d.
. dif/dt 7
IRG4PC30FD
90% Vge +Vge
Same ty pe device as D .U.T.
Vce
Ic 80% of Vce 430µF D .U .T.
10% Vce Ic
9 0 % .
Image gallery
Download