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IRG4PC30U - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRG4PC30U insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PC30U
Manufacturer	International Rectifier (now Infineon)
File Size	150.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30U Datasheet

Overview

PD 91461E IRG4PC30U INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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