UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
C
G E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified.
Full PDF Text Transcription for IRG4PC30UPBF (Reference)
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PD - 94923 IRG4PC30UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, ...
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Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C G E n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's VCES = 600V VCE(on) typ. = 1.
More Datasheets from International Rectifier (now Infineon)
IRG4PC30UPBF Datasheet
