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IRG4PC30U - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4PC30U INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4PC30U

Datasheet Details

Part number	IRG4PC30U
Manufacturer	International Rectifier
File Size	150.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30U Datasheet
Additional preview pages of the IRG4PC30U datasheet.

Product details

Features

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: May 30, 2007 |