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International Rectifier Electronic Components Datasheet

IRG4PC50FDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD -95225
IRG4PC50FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
• Lead-Free
Benefits
C
G
E
n-channel
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
70
39
280
280
25
280
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.64
0.83
------
40
------
Units
°C/W
g (oz)
04/29/04


International Rectifier Electronic Components Datasheet

IRG4PC50FDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PC50FDPbF
www.DataSheet4U.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Parameter
Min.
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage ----
----
----
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
21
Zero Gate Voltage Collector Current
----
----
Diode Forward Voltage Drop
----
----
Gate-to-Emitter Leakage Current
----
Typ.
----
0.62
1.45
1.79
1.53
----
-14
30
----
----
1.3
1.2
----
Max. Units
---- V
---- V/°C
1.6
---- V
----
6.0
---- mV/°C
---- S
250 µA
6500
1.7 V
1.5
±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 39A
VGE = 15V
IC = 70A
See Fig. 2, 5
IC = 39A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 39A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 25A
See Fig. 13
IC = 25A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ. Max.
190 290
28 42
65 97
55 ----
25 ----
240 360
140 210
1.5 ----
2.4 ----
3.9 5.0
59 ----
27 ----
400 ----
260 ----
6.5 ----
13 ----
4100 ----
250 ----
49 ----
50 75
105 160
4.5 10
8.0 15
112 375
420 1200
250 ----
160 ----
Units
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 39A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 25A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
2 www.irf.com


Part Number IRG4PC50FDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 11 Pages
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