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International Rectifier Electronic Components Datasheet

IRG4PC50SDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD - 97316
IRG4PC50SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Standard Speed CoPack IGBT
Features
• Standard: Optimized for minimum saturation voltage
and low operating frequencies (<1kHz)
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.28V
@VGE = 15V, IC = 41A
C
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current
dClamped Inductive Load Current
Diode Continous Forward Current
eDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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Max.
600
70
41
140
140
25
280
±20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.64
0.83
–––
40
Units
°C/W
www.irf.com
04/16/08


International Rectifier Electronic Components Datasheet

IRG4PC50SDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PC50SDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.75 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
— 1.28 1.36
IC = 41A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.62 —
V IC = 80A, VGE = 15V, TJ = 25°C
— 1.25 —
IC = 41A, VGE = 15V, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0 V VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -9.3 — mV/°C VCE = VGE, IC = 250µA (25°C - 150°C)
gfe Forward Transconductance
17 34 — S VCE = 100V, IC = 41A
— — 250
VGE = 0V, VCE = 600V
ICES
Collector-to-Emitter Leakage Current
— — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.3 1.7 V IF = 25A
— 1.2 1.5
IF = 25A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 180 280
IC = 41A
Qge Gate-to-Emitter Charge (turn-on)
— 24 37 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on)
— 61 92
VCC = 400V
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
— 0.72 —
IC = 41A, VCC = 480V, VGE = 15V
— 8.27 — mJ RG = 5.0, TJ = 25°C
Etotal
Total Switching Loss
— 8.99 13
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
— 33 —
IC = 41A, VCC = 480V, VGE = 15V
tr Rise time
— 30 — ns RG = 5.0, L = 200µH, TJ = 25°C
td(off)
Turn-Off delay time
— 650 980
tf Fall time
— 400 600
Etotal
Total Switching Loss
— 15 — mJ
td(on)
tr
Turn-On delay time
Rise time
— 31 —
IC = 41A, VCC = 480V, VGE = 15V
— 31 — ns RG = 5.0, L = 200µH
td(off)
Turn-Off delay time
— 1080 —
TJ = 150°C
tf Fall time
— 620 —
Cies Input Capacitance
— 4100 — pF VGE = 0V
Coes Output Capacitance
— 250 —
VCC = 30V
Cres Reverse Transfer Capacitance
— 48 —
f = 1.0Mhz
trr Diode Reverse Recovery Time
— 50 75 ns TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
105 160
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
Irr Peak Reverse Recovery Current
— 4.5 10 A TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
— 8.0 15
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
Qrr Peak Reverse Recovery Current
— 112 375 nC TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
— 420 1200
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
di(rec)M/dt
Peak Rate of Fall of Recovery During tb
— 250 — A/µs TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
— 160 —
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
Ref.Fig
2
3
13
Ref.Fig
8
18a, 18b
18c
18a, 18b
18c
18a, 18b
18c
7
14
18a, 18d
15
18a, 18d
16
18a, 18d
17
Notes:
Repetitive rating: VGE=15V; pulse width limited by maximum junction temperature. (See figure 20)
‚VCC=80%(VCES), VGE=15V, RG = 5.0Ω. (See figure 19)
ƒPulse width 80µs; duty factor 0.1%.
2 www.irf.com
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Part Number IRG4PC50SDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 10 Pages
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