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International Rectifier Electronic Components Datasheet

IRG4PC50UDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD -95185
IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
55
27
220
220
25
220
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.64
0.83
------
40
------
Units
°C/W
g (oz)
1
04/23/04


International Rectifier Electronic Components Datasheet

IRG4PC50UDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PC50UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 ---- ---- V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ---- 1.65 2.0
IC = 27A
VGE = 15V
---- 2.0 ---- V IC = 55A
See Fig. 2, 5
---- 1.6 ----
IC = 27A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ---- 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 16 24 ---- S VCE = 100V, IC = 27A
ICES
Zero Gate Voltage Collector Current
---- ---- 250 µ A VGE = 0V, VCE = 600V
---- ---- 6500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
---- 1.3 1.7 V IC = 25A
See Fig. 13
---- 1.2 1.5
IC = 25A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
---- 180 270
---- 25 38 nC
---- 61 90
---- 46 ----
---- 25 ---- ns
---- 140 230
---- 74 110
---- 0.99 ----
---- 0.59 ---- mJ
---- 1.58 1.9
---- 44 ----
---- 27 ---- ns
---- 240 ----
---- 130 ----
---- 2.3 ---- mJ
---- 13 ---- nH
---- 4000 ----
---- 250 ---- pF
---- 52 ----
---- 50 75 ns
---- 105 160
---- 4.5 10 A
---- 8.0 15
---- 112 375 nC
---- 420 1200
---- 250 ---- A/µs
---- 160 ----
Conditions
IC = 27A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C
16
TJ = 25°C
TJ = 125°C
IF = 25A
VR = 200V
di/dt 200A/µs
2 www.irf.com


Part Number IRG4PC50UDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 10 Pages
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