IRG4PC60F Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

* Industry standard TO-247AC package. C Fast Speed IGBT VCES = 600V G E VCE(

IRG4PC60F

International Rectifier

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Insulated gate bipolar transistor.

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