IRG4RC10SD Description
PD-91678B IRG4RC10SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack IGBT.
IRG4RC10SD Key Features
- Extremely low voltage drop 1.1V(typ) @ 2A
- S-Series: Minimizes power dissipation at up to 3
- Tight parameter distribution
- IGBT co-packaged with HEXFREDTM ultrafast
- Industry standard TO-252AA package
- Generation 4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- Lower losses than MOSFET's conduction and Diode losses