IRG4RC10KD Datasheet | International Rectifier

PD 91736A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - Short Circuit Rated Ultra Fast: Optimized for high operating frequencies >5.0 k Hz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-252AA package Short Circuit Rated Ultra Fast IGBT VCES = 600V VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-ch an nel Benefits - Latest generation 4 IGBT's offer highest power density motor controls possible - HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses - For hints see design tip 97003 D-PAK...