IRG4RC10SD
IRG4RC10SD is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
PD-91678B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Standard Speed Co Pack IGBT
Features
- Extremely low voltage drop 1.1V(typ) @ 2A
- S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
- Tight parameter distribution
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-252AA package
E n-channel
VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A
Benefits
- Generation 4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require less/no snubbing
- Lower losses than MOSFET's conduction and Diode losses
D-PAK...
