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PD-91678B
IRG4RC10SD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Standard Speed CoPack IGBT
Features
C
• Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package
G
E
n-channel
VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A
Benefits
• Generation 4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with
IGBT's .
IRG4RC10SD Datasheet
