IRG4RC10KDPBF Datasheet | International Rectifier

- 95035 IRG4RC10KDPb F INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - Short Circuit Rated Ultra Fast: Optimized for high operating frequencies >5.0 k Hz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-252AA package - Lead-Free Short Circuit Rated Ultra Fast IGBT Features VCES = 600V VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits...