Datasheet4U Logo Datasheet4U.com

IRG4RC10KPBF - INSULATED GATE BIPOLAR TRANSISTO

Features

  • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
  • Generation 4 IGBT design provides higher efficiency than Generation 3.
  • Industry standard TO-252AA package.
  • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized.

📥 Download Datasheet

Datasheet preview – IRG4RC10KPBF

📁 Similar Datasheet

  • IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD 95389 IRG4RC10KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.
Published: |