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IRG4RC10KPBF Datasheet INSULATED GATE BIPOLAR TRANSISTO

Manufacturer: International Rectifier (now Infineon)

Overview: PD 95389 IRG4RC10KPbF INSULATED GATE BIPOLAR TRANSISTOR.

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IRG4RC10KPBF insulated gate bipolar transisto by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4RC10KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	221.67 KB
Description	INSULATED GATE BIPOLAR TRANSISTO
Download	IRG4RC10KPBF Download (PDF)

Key Features

Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
Generation 4 IGBT design provides higher efficiency than Generation 3.
Industry standard TO-252AA package.
Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized.

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