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PD - 95192A
IRG4RC10SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package • Lead-Free
C
Standard Speed CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
IRG4RC10SDPBF Datasheet
