IRG4RC20F Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode).

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs.

* Industry standard TO-252AA package

* Co

IRG4RC20F

International Rectifier

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Insulated gate bipolar transistor.

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