IRG4RC20F Description
PD - 91731A IRG4RC20F INSULATED GATE BIPOLAR TRANSISTOR.
IRG4RC20F Key Features
- Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode)
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs
- Industry standard TO-252AA package
- bines very low VCE(on) with low switching losses
- Generation 4 IGBTs offer highest efficiency
- Optimized for specific application conditions
- High power density and current rating