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IRG7PH28UD1PBF Datasheet, International Rectifier

IRG7PH28UD1PBF transistor equivalent, insulated gate bipolar transistor.

IRG7PH28UD1PBF Avg. rating / M : 1.0 rating-11

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IRG7PH28UD1PBF Datasheet

Features and benefits


* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* Ultra-low VF diode
* 1300Vpk repetitive transient capacity
* 1.

Application

Features
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* Ultra-low VF.

Image gallery

IRG7PH28UD1PBF Page 1 IRG7PH28UD1PBF Page 2 IRG7PH28UD1PBF Page 3

TAGS

IRG7PH28UD1PBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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