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IRG7PH28UD1PbF IRG7PH28UD1MPbF
C VCES = 1200V IC = 15A, TC = 100°C
G E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package Benefits Device optimized for induction heating and soft switching applications High efficiency due to low VCE(ON), low switching losses and ultra-low VF Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI Base part number IRG7PH28UD1PbF IRG7PH28UD
IRG7PH28UD1PBF Datasheet
