IRG7PH28UD1PBF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* Ultra-low VF diode
* 1300Vpk repetitive transient capacity
* 1.
Features
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* Ultra-low VF.
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