IRG7PH28UD1PBF Overview
IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS.
IRG7PH28UD1PBF Key Features
- Low VCE (ON) trench IGBT technology - Low switching losses - Square RBSOA - Ultra-low VF diode - 1300Vpk repetitiv