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IRGB4B60KD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRGB4B60KD1PBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB4B60KD1PBF
Manufacturer	International Rectifier (now Infineon)
File Size	437.61 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4B60KD1PBF Datasheet

Overview

PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transien.

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