IRGB4B60KD1PBF Key Features
- Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperatu
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
IRGB4B60KD1PBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
| Part Number | Description |
|---|---|
| IRGB4B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGB4045DPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGB4055PBF | PDP TRENCH IGBT |
| IRGB4056DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGB4059DPbF | INSULATED GATE BIPOLAR TRANSISTOR |
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.