IRGB4B60KD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

Name: IRGB4B60KD1PBF
SKU: IRGB4B60KD1PBF-585037

International Rectifier

The IRGB4B60KD1PBF by International Rectifier is a INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	IRGB4B60KD1PBF
Manufacturer	International Rectifier
File Size	437.61 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4B60KD1PBF_InternationalRectifier.pdf
Additional preview pages of the IRGB4B60KD1PBF datasheet.

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transien.

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Published: May 30, 2007 |