Part number:
IRGB4B60KD1PBF
Manufacturer:
International Rectifier
File Size:
437.61 KB
Description:
Insulated gate bipolar transistor.
IRGB4B60KD1PBF Datasheet (437.61 KB)
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF I
IRGB4B60KD1PBF Datasheet (437.61 KB)
IRGB4B60KD1PBF
International Rectifier
437.61 KB
Insulated gate bipolar transistor.
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