IRGB6B60KDPBF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .
dm x Zthjc + Tc
1E-3 1E-2 1E-1 1E+0
0.001 1E-6 1E-5 1E-4
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transi.
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