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IRGIB7B60KD Datasheet, International Rectifier

IRGIB7B60KD transistor equivalent, insulated gate bipolar transistor.

IRGIB7B60KD Avg. rating / M : 1.0 rating-12

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IRGIB7B60KD Datasheet

Features and benefits


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* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maxi.

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IRGIB7B60KD Page 1 IRGIB7B60KD Page 2 IRGIB7B60KD Page 3

TAGS

IRGIB7B60KD
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

Manufacturer


International Rectifier

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