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IRGIB7B60KD Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRGIB7B60KD datasheet preview

Datasheet Details

Part number	IRGIB7B60KD
Manufacturer	International Rectifier (now Infineon)
File Size	457.39 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB7B60KD_InternationalRectifier.pdf

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. IRGIB7B60KD C VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. VCE(o.

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