Datasheet Details
| Part number | IRGMVC50U |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 576.31 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 IRGMVC50U Datasheet
|
|
|
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Features
- Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 27A.