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IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4062DPBF datasheet PDF. This datasheet also covers the IRGB4062DPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • C.
  • Low VCE (ON) Trench IGBT Technology.
  • Low switching losses.
  • Maximum Junction temperature 175 °C.
  • 5 μS short circuit SOA.
  • Square RBSOA G.
  • 100% of the parts tested for ILM .
  • Positive VCE (ON) Temperature co-efficient.
  • Ultra fast soft Recovery Co-Pak Diode E n-channel.
  • Tight parameter distribution.
  • Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB4062DPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM  • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode E n-channel • Tight parameter distribution • Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.
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