Datasheet Summary
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package
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- 97101
Key Parameters
VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c TJ max
300 1.75 205 150
V V A °C
C n-channel
G G ate C C ollector
TO-247AC
E E m itter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon...