Datasheet Summary
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
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- 97208
Key Parameters
VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c TJ max
300 1.75 205 150
V V A °C
G E n-channel
G Gate C Collector
TO-247AC
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area...