IRGP4263D-EPbF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS com.
* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding
G
E
n-channel
G Gate
GCE
IRGP4263DPbF TO‐2.
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