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IRGP4790PBF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

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IRGP4790PBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGP4790PBF
Manufacturer	International Rectifier (now Infineon)
File Size	772.45 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4790PBF Datasheet

Overview

VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.

Key Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor C G E n-channel G Gate E GC IRGP4790PbF TO‐247AC C Collector E GC IRGP4790‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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