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IRGP4790DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGP4790DPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4790DPbF

Datasheet Details

Part number	IRGP4790DPbF
Manufacturer	International Rectifier
File Size	868.87 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4790DPbF Datasheet
Additional preview pages of the IRGP4790DPbF datasheet.

IRGP4790DPbF Product details

Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF TO‐247AC C Collector E GC IRGP4790D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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Published: Mar 8, 2016 |