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IRGP4790PBF - Insulated Gate Bipolar Transistor

Product Overview

International Rectifier

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IRGP4790PBF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4790PBF

Datasheet Details

Part number	IRGP4790PBF
Manufacturer	International Rectifier
File Size	772.45 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4790PBF Datasheet
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IRGP4790PBF Product details

Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor C G E n-channel G Gate E GC IRGP4790PbF TO‐247AC C Collector E GC IRGP4790‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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Published: Feb 16, 2016 |