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IRGP4740D-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP4740D-EPbF datasheet PDF. This datasheet also covers the IRGP4740DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Base part number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped I.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4740DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRGP4740DPbF IRGP4740D-EPbF VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C G Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E C E G C E n-channel G Gate IRGP4740DPbF TO-247AC C Collector IRGP4740D-EPbF TO-247AD E Emitter Features Low VCE(ON) and Switching Losses 5.