IRGP4740D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP4740D-EPbF, a member of the IRGP4740DPbF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

Part number	IRGP4740D-EPbF
Manufacturer	International Rectifier
File Size	814.43 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4740D-EPbF Datasheet
Additional preview pages of the IRGP4740D-EPbF datasheet.

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Base part number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped I.

Other Datasheets by International Rectifier

Published: Nov 5, 2014 |