IRGP4750DPbF
IRGP4750DPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
IRGP4750DPbF IRGP4750D-EPbF
VCES = 650V
IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications
- Industrial Motor Drive
- UPS
- Solar Inverters
- Welding
Features
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs pliant
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
E n-channel
G Gate
E GC
IRGP4750DPbF TO‐247AC
C Collector
E GC
IRGP4750D‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current Sharing...
