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IRGP4750DPbF - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGP4750DPbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4750DPbF

Datasheet Details

Part number	IRGP4750DPbF
Manufacturer	International Rectifier
File Size	652.44 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4750DPbF Datasheet
Additional preview pages of the IRGP4750DPbF datasheet.

IRGP4750DPbF Product details

Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC C Collector E GC IRGP4750D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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Published: Oct 4, 2015 |