IRGP4750D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP4750D-EPbF, a member of the IRGP4750DPbF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

Part number	IRGP4750D-EPbF
Manufacturer	International Rectifier
File Size	652.44 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4750D-EPbF Datasheet
Additional preview pages of the IRGP4750D-EPbF datasheet.

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC C Collector E GC IRGP4750D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

Other Datasheets by International Rectifier

Published: Oct 4, 2015 |