Datasheet4U Logo Datasheet4U.com

IRGP4760-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP4760-EPbF datasheet PDF. This datasheet also covers the IRGP4760PbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant C    IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor G E n-channel G Gate E GC IRGP4760PbF  TO‐247AC  C Collector E GC IRGP4760‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4760PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRGP4050 PDP Switch IRF
IRGP420U INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP430U INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP440U INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4760D-EPbF Insulated Gate Bipolar Transistor
IRGP4760DPbF Insulated Gate Bipolar Transistor
IRGP4760PbF Insulated Gate Bipolar Transistor
IRGP4740D-EPbF Insulated Gate Bipolar Transistor
IRGP4740DPbF Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.