Datasheet Details
| Part number | IRGP4760-EPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 810.59 KB |
| Description | Insulated Gate Bipolar Transistor |
| Datasheet | IRGP4760-EPbF IRGP4760PbF Datasheet (PDF) |
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Overview: VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRGP4760-EPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 810.59 KB |
| Description | Insulated Gate Bipolar Transistor |
| Datasheet | IRGP4760-EPbF IRGP4760PbF Datasheet (PDF) |
|
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| Part Number | Description |
|---|---|
| IRGP4760D-EPbF | Insulated Gate Bipolar Transistor |
| IRGP4760DPbF | Insulated Gate Bipolar Transistor |
| IRGP4760PbF | Insulated Gate Bipolar Transistor |
| IRGP4740D-EPbF | Insulated Gate Bipolar Transistor |
| IRGP4740DPbF | Insulated Gate Bipolar Transistor |
| IRGP4750D-EPbF | Insulated Gate Bipolar Transistor |
| IRGP4750DPbF | Insulated Gate Bipolar Transistor |
| IRGP4790-EPbF | Insulated Gate Bipolar Transistor |
| IRGP4790D-EPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4790DPbF | INSULATED GATE BIPOLAR TRANSISTOR |