IRGP4760-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP4760-EPbF, a member of the IRGP4760PbF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

Part number	IRGP4760-EPbF
Manufacturer	International Rectifier
File Size	810.59 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4760-EPbF Datasheet
Additional preview pages of the IRGP4760-EPbF datasheet.

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant C IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor G E n-channel G Gate E GC IRGP4760PbF TO‐247AC C Collector E GC IRGP4760‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

Other Datasheets by International Rectifier

Published: Nov 12, 2014 |