IRGP4760PbF
IRGP4760PbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
VCES = 650V
IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
- Industrial Motor Drive
- UPS
- Solar Inverters
- Welding
Features
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs pliant
C
IRGP4760PbF IRGP4760-EPbF
Insulated Gate Bipolar Transistor
E n-channel
G Gate
E GC IRGP4760PbF TO‐247AC
C Collector
E GC
IRGP4760‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally...
