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IRGP4760PbF - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGP4760PbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4760PbF

Datasheet Details

Part number	IRGP4760PbF
Manufacturer	International Rectifier
File Size	810.59 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4760PbF Datasheet
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IRGP4760PbF Product details

Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant C IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor G E n-channel G Gate E GC IRGP4760PbF TO‐247AC C Collector E GC IRGP4760‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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Published: Nov 12, 2014 |