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IRGP4760DPbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.

IRGP4760DPbF datasheet preview

Datasheet Details

Part number	IRGP4760DPbF
Manufacturer	International Rectifier (now Infineon)
File Size	914.13 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4760DPbF-InternationalRectifier.pdf

Key Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4760DPbF TO‐247AC C Collector E GC IRGP4760D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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