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IRGP4740DPbF - Insulated Gate Bipolar Transistor

Key Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Base part number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped I.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4740D-EPbF Insulated Gate Bipolar Transistor
IRGP4750D-EPbF Insulated Gate Bipolar Transistor
IRGP4750DPbF Insulated Gate Bipolar Transistor
IRGP4760-EPbF Insulated Gate Bipolar Transistor
IRGP4760D-EPbF Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRGP4740DPbF IRGP4740D-EPbF VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C G Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E C E G C E n-channel G Gate IRGP4740DPbF TO-247AC C Collector IRGP4740D-EPbF TO-247AD E Emitter Features Low VCE(ON) and Switching Losses 5.