IRGPS66160DPBF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE (ON) .
* Welding
* H Bridge Converters
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
.
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