IRGSL6B60KD transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .
, Junction-to-Case (DIODE)
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9
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IRG/B/S/SL6B60KD
L
L DUT
0
VCC
80 V
+ -
DUT
480V
.
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